Updating firmware seagate

Its mechanical shock resistance helps explain its popularity over hard disks in portable devices, as does its high durability, ability to withstand high pressure, temperature and immersion in water, etc.NOR-based flash has long erase and write times, but provides full address and data buses, allowing random access to any memory location.Rather, data must be read on a block-wise basis, with typical block sizes of hundreds to thousands of bits.This makes NAND flash unsuitable as a drop-in replacement for program ROM, since most microprocessors and microcontrollers require byte-level random access.In this regard, NAND flash is similar to other secondary data storage devices, such as hard disks and optical media, and is thus highly suitable for use in mass-storage devices, such as memory cards.The first NAND-based removable media format was Smart Media in 1995, and many others have followed, including: Flash memory stores information in an array of memory cells made from floating-gate transistors.The floating gate may be conductive (typically polysilicon in most kinds of flash memory) or non-conductive (as in SONOS flash memory).

The two main types of flash memory are named after the NAND and NOR logic gates.The individual flash memory cells exhibit internal characteristics similar to those of the corresponding gates.While EPROMs had to be completely erased before being rewritten, NAND-type flash memory may be written and read in blocks (or pages) which are generally much smaller than the entire device.On top is the control gate (CG), as in other MOS transistors, but below this there is a floating gate (FG) insulated all around by an oxide layer.The FG is interposed between the CG and the MOSFET channel.In spacecraft and other high-radiation environments, the on-chip charge pump is the first part of the flash chip to fail, although flash memories will continue to work – in read-only mode – at much higher radiation levels.


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